4

Electron mobility in n-channel depletion-type MOS transistors

Year:
1982
Language:
english
File:
PDF, 472 KB
english, 1982
5

Ionization coefficients in semiconductors: A nonlocalized property

Year:
1974
Language:
english
File:
PDF, 1.03 MB
english, 1974
10

Analysis and design of honeycomb welded structures

Year:
1992
Language:
english
File:
PDF, 600 KB
english, 1992
16

Threshold energy effect on avalanche breakdown voltage in semiconductor junctions

Year:
1975
Language:
english
File:
PDF, 569 KB
english, 1975
18

SOS MOSFET two-dimensional analysis

Year:
1982
Language:
english
File:
PDF, 389 KB
english, 1982
19

SOS/CMOS as a high-performance LSI device

Year:
1982
Language:
english
File:
PDF, 449 KB
english, 1982
20

SOS/CMOS as a High-Performance LSI Device

Year:
1982
Language:
english
File:
PDF, 732 KB
english, 1982
22

Effect of undepleted high-resistivity region on microwave efficiency of GaAs IMPATT diodes

Year:
1975
Language:
english
File:
PDF, 312 KB
english, 1975
26

Current Dependence of Frequency in Si IMPATT Diodes

Year:
1968
Language:
english
File:
PDF, 806 KB
english, 1968
49

Reflecting on the challenges of applied theatre in Kenya

Year:
2017
Language:
english
File:
PDF, 1.57 MB
english, 2017